Vishay: MosFET N Channel 40V 120A Transistor TO220AB - SUP40010EL-GE3

FEATURES

• TrenchFET® power MOSFET
• Maximum 175 °C junction temperature
• Qgd/Qgs ratio < 0.5
• Operable with logic-level gate drive
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance

APPLICATIONS

• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
• Motor drive switch
• DC/AC inverter
• Battery management

Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	1.47 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	230 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Series:	SUP
Packaging:	Tube
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	17 ns
Forward Transconductance - Min:	174 S
Product Type:	MOSFET
Rise Time:	20 ns