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N-Channel IGBT Transistor HGTG30N60C3D (63A/600V)

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N-Channel IGBT Transistor HGTG30N60C3D (63A/600V)
  • Buy 5 for PKR590.00 each and save 5%
  • Buy 20 for PKR570.00 each and save 8%
  • Buy 50 for PKR560.00 each and save 10%

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.


  1. RoHS: RoHS Compliant By Exemption Details        
  2. Configuration: Single 
  3. Collector- Emitter Voltage VCEO Max: 600 V          
  4. Collector-Emitter Saturation Voltage: 1.5 V  
  5. Maximum Gate Emitter Voltage: +/- 20 V     
  6. Continuous Collector Current at 25 C: 63 A 
  7. Gate-Emitter Leakage Current: +/- 100 nA   
  8. Pd - Power Dissipation: 208 W         
  9. Mounting Style: Through Hole 
  10. Package / Case: TO-247-3       
  11. Maximum Operating Temperature: + 150 C




  1. 1 X N-Channel IGBT Transistor HGTG30N60C3D (63A/600V)
Weight (KG) 0.020000
Manufacturer FAIRCHILD
Voltage (V) 600
Current (A) 63
Output Voltage NA
Transistor Polarity N-Channel
SMD_Package DIP TO-247-3
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