N-Channel IGBT Transistor HGTG30N60C3D (63A/600V)

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

SPECIFICATIONS:

1. RoHS: RoHS Compliant By Exemption Details        
2. Configuration: Single 
3. Collector- Emitter Voltage VCEO Max: 600 V          
4. Collector-Emitter Saturation Voltage: 1.5 V  
5. Maximum Gate Emitter Voltage: +/- 20 V     
6. Continuous Collector Current at 25 C: 63 A 
7. Gate-Emitter Leakage Current: +/- 100 nA   
8. Pd - Power Dissipation: 208 W         
9. Mounting Style: Through Hole 
10. Package / Case: TO-247-3       
11. Maximum Operating Temperature: + 150 C

RELATED DOCUMENTS:

Datasheet.

PACKAGE INCLUDES:

1. 1 X N-Channel IGBT Transistor HGTG30N60C3D (63A/600V)