Genesic: Silicon Carbide MOSFET, Single, N Channel, 105 A, 1.2 kV, 0.02 ohm, SOT-227 - G3R20MT12N

SKU
MD-01932
PKR21,600.00
Quantity: 0
Product Attributes
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
24mOhm @ 60A, 15V
Vgs(th) (Max) @ Id
2.69V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
219 nC @ 15 V
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
5873 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
365W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227
Package / Case
SOT-227-4, miniBLOC
Base Product Number
G3R20
Part Number G3R20MT12N
Weight (KG) 0.050000
Packing Unit 1pc
Product Availability Available on Demand
Only registered users can write reviews. Please Sign in or create an account