Genesic: Silicon Carbide MOSFET, Single, N Channel, 105 A, 1.2 kV, 0.02 ohm, SOT-227 - G3R20MT12N
SKU
MD-01932
Category: Transisters
Product Attributes
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Product Status
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Active
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FET Type
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N-Channel
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Technology
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SiCFET (Silicon Carbide)
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Drain to Source Voltage (Vdss)
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1200 V
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Current - Continuous Drain (Id) @ 25°C
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105A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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15V
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Rds On (Max) @ Id, Vgs
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24mOhm @ 60A, 15V
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Vgs(th) (Max) @ Id
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2.69V @ 15mA
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Gate Charge (Qg) (Max) @ Vgs
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219 nC @ 15 V
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Vgs (Max)
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+20V, -10V
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Input Capacitance (Ciss) (Max) @ Vds
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5873 pF @ 800 V
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FET Feature
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-
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Power Dissipation (Max)
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365W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Chassis Mount
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Supplier Device Package
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SOT-227
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Package / Case
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SOT-227-4, miniBLOC
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Base Product Number
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G3R20
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| Part Number | G3R20MT12N |
|---|---|
| Weight (KG) | 0.050000 |
| Packing Unit | 1 Piece |
| Product Availability | Available on Demand |
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